Disordered SiSiGe superlattices grown by ultrahigh vacuum chemical vapor deposition

A series of SiSi1−xGex disordered superlattices with various degrees of disorder were grown in an ultrahigh vacuum chemical vapor deposition system (UHV/CVD). High-resolution double-crystal X-ray diffraction (HRXRD), and conventional cross-sectional transmission electron microscopy were used to evaluate the crystalline quality of these superlattices. A dynamical X-ray simulation program was employed to analyze the experimental rocking curves. Excellent matches between experimental rocking curves and simulated ones were obtained for all superlattices with various degrees of disorder.