Title of article :
Disordered SiSiGe superlattices grown by ultrahigh vacuum chemical vapor deposition
Author/Authors :
Ting-Chang Chang، نويسنده , , Wen-Kuan Yeh، نويسنده , , Chun-Yen Chang، نويسنده , , Tz-Guei Jung، نويسنده , , Wen-Chung Tsai، نويسنده , , Guo-Wei Huang، نويسنده , , Yu-Jane Mei، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
5
From page :
119
To page :
123
Abstract :
A series of SiSi1−xGex disordered superlattices with various degrees of disorder were grown in an ultrahigh vacuum chemical vapor deposition system (UHV/CVD). High-resolution double-crystal X-ray diffraction (HRXRD), and conventional cross-sectional transmission electron microscopy were used to evaluate the crystalline quality of these superlattices. A dynamical X-ray simulation program was employed to analyze the experimental rocking curves. Excellent matches between experimental rocking curves and simulated ones were obtained for all superlattices with various degrees of disorder.
Journal title :
Applied Surface Science
Serial Year :
1996
Journal title :
Applied Surface Science
Record number :
990325
Link To Document :
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