Author/Authors :
C.H. Lee، نويسنده , , C.T. Chen، نويسنده ,
Abstract :
The characteristics of GaN thin films deposited by PECVD on Si are investigated. The compositional, chemical, electrical and optical properties are characterized as functions of deposition temperature and RF power. The resistivity, chemical etching rate and refractive index are analyzed and discussed in terms of the film composition.
