Title of article
Characteristics of PECVD GaN thin films
Author/Authors
C.H. Lee، نويسنده , , C.T. Chen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
124
To page
127
Abstract
The characteristics of GaN thin films deposited by PECVD on Si are investigated. The compositional, chemical, electrical and optical properties are characterized as functions of deposition temperature and RF power. The resistivity, chemical etching rate and refractive index are analyzed and discussed in terms of the film composition.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990326
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