Growth of the thin film CdSiAs system by metalorganic chemical vapor deposition

A possibility of growing thin films of CdSiAs2 was pursued by metalorganic chemical vapor deposition (MOCVD) in the CdSiAs system, where dimethylcadmium (Cd(CH3)2, DMCd), silane (SiH4) and arsine (AsH3) were used as the source gases. Pyrolysis experiments prior to the MOCVD indicated that DMCd accelerated the decomposition of SiH4. In the case of atmospheric MOCVD for the CdSiAs system, Si, SiAs and SiAs2 deposited in the temperature range at about 873 K and Cd3As2 below 693 K, while no formation of CdSiAs2 was observed. Low pressure MOCVD by using SiH4 enriched source gases attained Si incorporation in the film grown at 473–693 K. The X-ray diffraction patterns indicated the formation of CdSiAs2, which was in multi-phase deposits with SiAs, SiAs2, Cd3As2 and CdAs2.