Structural characterization of BaTiO3 films by sol-gel method using mono-substituting chelating agent

BaTiO3 films have been deposited onto PtSi substrates by repeated spin-coating and heat-treatment of precursors prepared by a sol-gel process using Ti(O-iPr)4, Ba(CH3COO)2, and chelating agent CH3COCH2COCH3. These films exhibit cubic phase structure and possess desired (110) orientation. Representative fragments Ti+, TiO+, Ba+ and BaOH+ from BaTiO3 lattices are observed in the positive static SIMS spectrum. A well-defined interface between a BaTiO3 film and a PtSi substrate suggests that the proposed method is capable of depositing BaTiO3 films onto PtSi substrates without Si diffusion from underlying PtSi substrates.