The electrical and optical characteristics of GaAs on Si by modified flow rate modulation epitaxy

In this work, device quality GaAs on Si was fabricated using modified flow rate modulation metal-organic chemical vapor deposition. Modified flow rate modulation could provide faster atomic surface mobility and avoid anti-site defects in the compound semiconductor epilayer. So the quality of the GaAs on Si could be further improved as compared with that of GaAs prepared by the conventional growth method. With thinner, better quality GaAs epilayers, GaAs on Si integration might become realistic. In a 1 μm thick epilayer, we achieved a PL spectrum with a 7.0 meV FWHM at 77 K and an electron mobility of 1650 cm2/V · s at 300 K.