Surfactant modified growth of CuInSe2 thin films

A p-type film with resistivity as low as 0.05 Ω · cm and a mirror-like surface was obtained by the growth of the film in the presence of a Sb beam. The dramatic change in surface morphology is attributed to the layer-by-layer growth of the film. This film has a compact grain structure with grains about 1 mm in size, which is comparable with that of the Cu-rich film grown without Sb. A SIMS profile shows the segregation of Sb on the surface and a trace amount of Sb in the film. We also find that the sticking probabilities of the consituent atoms are affected by the addition of Sb during film growth.