Title of article
Laser-induced formation of visible light emitting silicon
Author/Authors
D. Dimova-Malinovska، نويسنده , , M. Tzolov، نويسنده , , N. Malinowski، نويسنده , , Ts. Marinova، نويسنده , , V. Krastev، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
6
From page
457
To page
462
Abstract
Light emitting silicon has been prepared by Ar laser (514.5 nm) induced stain etching and Nd:YAG impulse (532 nm) laser irradiation in air. Photoluminescence (PL), IR and XPS spectra have been studied. The intensity and position of the PL depend on the power and the duration of laser beam treatment during the etching. Correlation between the PL and chemical bonding is discussed.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990616
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