White synchrotron X-radiation-section topography of high energy density ns-pulsed (Nd:YAG) ablation damage in Si(100) wafers

The penetration depth of ns-laser pulse damage in silicon single crystal semiconductor wafers is observed from (Laue transmission) white synchrotron X-radiation section topographs. Strain fields (with displacements ∼ 1000 times smaller than the dislocation region) are sensitively detected.