Preparation of SiOxNy films by reactive KrF laser ablation

Various SiOxNy films were prepared from Si3N4 target by reactive KrF laser ablation under various oxygen pressures (10−7 ∼ 10−2 Torr). Oxygen content in these films increased and nitrogen content decreased with increasing oxygen pressure. A composite film piled with various SiOxNy layers was prepared by KrF laser irradiation onto Si3N4 target for 2.5 min with increasing oxygen pressure stepwise gradually from 10−7 to 10−2 Torr.