Pulsed laser deposition of nasicon thin films

We have deposited NASICON (Na SuperIonic CONductor) films of thicknesses ranging from 100 to 600 nm, by Pulsed Laser Deposition (PLD), on SiO2Si substrates. The deposition rates varied from 6 × 10−3 to 0.08 nm/pulse depending on the conditions employed. XPS measurements show that all elements are transferred from the target to the substrate and that the thin film composition is very close to that of the target. Film morphology depends upon the laser energy density at the target. Films deposited at about 2 J/cm2 show a rough surface and a columnar structure. At lower energy density (400 mj/cm2), a smoother surface is obtained. Electrical measurements show good ionic conductivity, and that the films are suitable for the fabrication of electrochemical gas sensors.