Author/Authors :
Hiromichi Shimada، نويسنده , , Nobuyuki Matsubayashi، نويسنده , , Motoyasu Imamura، نويسنده , , Toshio Sato، نويسنده , , Akio Nishijima and Yoshimasa Nihei، نويسنده ,
Abstract :
Excitation energy variable XPS measurements were performed using high-flux soft X-rays from synchrotron radiation. This method enables non-destructive XPS depth profiling by changing the photoelectron attenuation length. In the analysis of a HF cleaned silicon wafer, the present method revealed the presence of a very thin (∼ 1A˚) surface layer of partially oxidized silicon (Siδ+) which would not be detected by conventional Al or Mg Kα X-ray sources.
