Depth-dependent non-destructive analysis of thin overlayers using total-reflection-angle X-ray spectroscopy

Electron-beam excited X-ray chemical analysis with very small angle condition has been applied to measure thin overlayers on substrates. Relations between the fluorescent X-ray intensity and the emission angle is investigated based on a model. It is demonstrated that the emission-angle dependence of the X-ray intensity is sensitively reflected by film thickness and layer structure. The calculations agreed well with experiments for thin Au and Pd multilayers on Si substrate. The results show that this method is applicable to a non-destructive depth profiling of chemical compositions.