Luminescent properties of an anodically oxidized P-doped silicon wafer

We have studied photoluminescence (PL) from an anodically oxidized P-doped silicon wafer. A PL band was initially observed with a peak maximum at 740 nm. The repetition of the anodically oxidization procedure in an HF solution resulted in a blue shift and a gradual disappearance of the PL. The chemical structure was examined by means of the X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The Si-Hx, Si-OH, and Si-O-Si formed by repeated anodization in an HF solution would promote the quantum size effect and provide the characteristic PL.