Dissociative scattering of low-energy SiF3+ and SiF+ ions (5–200 eV) on Cu(100) surface

Dissociative scattering of molecular SiF3+ and SiF+ ions from a Cu(100) single crystal surface has been investigated in the incident energy range from 5 eV to 200 eV with a scattering angle of 77°. The scattered ion intensity of dissociative ions and parent molecular ions were measured as a function of incident ion energy. The observed data show that onset energies of dissociation for SiF3+ and SiF+ ions are 30 eV and 40 eV, respectively. The obtained threshold energies are consistent with a impulsive collision model where the dissociation of incident ion is caused by vibrational excitation during collision.