Title of article
Charging phenomenon of insulators in negative-ion implantation
Author/Authors
Yoshitaka Toyota، نويسنده , , Hiroshi Tsuji، نويسنده , , Shoji Nagumo، نويسنده , , Yasuhito Gotoh، نويسنده , , Junzo Ishikawa، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
5
From page
360
To page
364
Abstract
The energy distribution of secondary electrons emitted from an insulator during negative-ion implantation was measured. According to secondary-electron-energy analysis, the charging voltage of insulator was estimated from the measured energy distribution. The experimental results in negative-carbon-ion implantation showed that the charging voltages of a quartz glass plate and a photoresist film on silicon substrate are several negative volts in the energy range from 5 to 35 keV and decrease gradually with increasing ion energy. The low negative charging voltage of insulator and the most probable energy of the secondary-electron energy distribution during negative-ion implantation are discussed using a charging model based on an electric double layer.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990819
Link To Document