Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization

In order to synthesize metastable group-IV binary alloy semiconductor thin films on Si, Si(100) substrates were implanted with 17 keV C ions forSi/1−yCySi and alternatively with 110 keV Sn ions forSi/1−zSnzSi. Subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar ions at 300–400°C has induced a good epitaxial growth up to the surface both forSi/1−yCySi (y=0.014 at peak concentration) and forSi/1−zSnzSi (z=0.029 at peak concentration). X-ray diffraction measurements have shown a growth ofSi/1−yCySi with smaller tensile strain than forSi/1−yCySi grown by solid phase epitaxial growth (SPEG) up to 650°C. Photoluminescence measurements have revealed properties of defect related to I1(Ar) line and G line emissions for IBIEC-grownSi/1−yCySi samples. IBIEC has induced an incomplete crystalline growth and a loss of implanted Sn atoms forSi/1−zSnzSi (z=0.086 at peak concentration).