Valence band structure of metal silicides modified by argon ion implantation

We have observed a change of the valence band structure of metal (Fe) silicide with an increase in the Ar+ ion dose in the silicide layer using soft X-ray emission spectroscopy (SXES). The electrical conductivity of the silicide layer also increases with the Ar+ ion dose. We consider that the interatomic distance in the metal silicide modified by the implanted Ar+ ions should have an important effect on the valence band structure, and that such a change of the valence band structure causes an increase in the electrical conductivity of the silicide.