A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature

The temperature dependence on current-voltage characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) is investigated. Experiments have been performed from 304 to 404 K, while a theoretical model is proposed to explain the experimental data. The current-voltage characteristics of hydrogenated amorphous silicon thin-film transistors are derived from the Poissonʹs equation, in which the temperature dependence on the concentration of the localized charges, the concentration of electrons in the conduction band, and the field-effect mobility of electrons is considered. The work is further extended by considering the resistance of the a-Si:H film layer as a function of temperature. It is shown that the results conform the experimental data to a certain degree. And with the consideration of the resistance of the a-Si:H film layer as a function of temperature, the fitting of the theoretical model to the experimental data is much improved.