Correlation between cathodoluminescence and structural defects inZnS/GaAs(100) andZnS/eGaAs(100) studied by transmission electron microscopy

The spatial distributions of the cathodoluminescence (CL) emissions from thin ZnS and ZnSe films on GaAs(100) have been examined by the low-temperature CL imaging system combined with a transmission electron microscope (TEM). The correlation between these CL emissions and structural defects were studied by comparing the monochromatic CL images with TEM images for both plan-view and cross-sectional observations. It is found that the bound exciton associated emission (A0, X) and the (e, A) emission are affected by the stacking fault distribution. The localization of the emission due to the DLE transition near the interface suggest the diffusion of Ga or As atoms from the GaAs substrate.