Author/Authors :
Syed Irfan Gheyas، نويسنده , , Shinya Hirano، نويسنده , , Mitsuhiro Nishio، نويسنده , , Hiroshi Ogawa، نويسنده ,
Abstract :
The effects of substrate temperature and transport rate of source materials (dimethylzinc and diethyltellurium) on the growth rate and photoluminescence properties of ZnTe layers grown on the ZnTe (100) substrate by atmospheric pressure MOVPE have been investigated. Strong free exciton emission and Y bands appear predominantly in films grown under low transport rate (e.g., 10–15 μmol/min) and moderate temperature (e.g., 380°C).
