• Title of article

    Electron tunneling through chemical oxide of silicon

  • Author/Authors

    T. Hattori، نويسنده , , K. Watanabe، نويسنده , , M. Ohashi، نويسنده , , M. Matsuda، نويسنده , , M. Yasutake، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1996
  • Pages
    4
  • From page
    86
  • To page
    89
  • Abstract
    Carrier transport between gold and n+-Si through chemical oxide of Si was measured using an atomic force microscope with a conducting probe. A direct evidence for the effect of SiH bonds on the electron tunneling current was obtained.
  • Journal title
    Applied Surface Science
  • Serial Year
    1996
  • Journal title
    Applied Surface Science
  • Record number

    990895

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=990895