Electron tunneling through chemical oxide of silicon
Author/Authors :
T. Hattori، نويسنده , , K. Watanabe، نويسنده , , M. Ohashi، نويسنده , , M. Matsuda، نويسنده , , M. Yasutake، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
4
From page :
86
To page :
89
Abstract :
Carrier transport between gold and n+-Si through chemical oxide of Si was measured using an atomic force microscope with a conducting probe. A direct evidence for the effect of SiH bonds on the electron tunneling current was obtained.
