Author/Authors :
J.F. Nützel، نويسنده , , M. Holzmann، نويسنده , , P. Schittenhelm، نويسنده , , G. Abstreiter، نويسنده ,
Abstract :
We have investigated the surface segregation of phosphorus in comparison to antimony on Si and SiGe(001) in molecular beam epitaxy. The segregation was measured with electrochemical capacitance voltage and secondary ion mass spectroscopy. Phosphorus doping is used to achieve high carrier concentrations in complementary double-sided modulation-doped n-Si and p-Ge channel (CMOD) structures on SiGe graded buffers.
