Author/Authors :
D.H. Tassis، نويسنده , , C.L. Mitsas، نويسنده , , T.T. Zorba، نويسنده , , M. Angelakeris، نويسنده , , C.A. Dimitriadis، نويسنده , , O. Valassiades، نويسنده , , D.I. Siapkas، نويسنده , , G. Kiriakidis، نويسنده ,
Abstract :
High quality β-FeSi2 thin films were grown on Si〈100〉 substrates by UHV electron beam evaporation of α-Si/Fe multilayers and annealed by conventional vacuum furnace and rapid thermal techniques. Infrared spectroscopy (reflectance and transmittance) and electrical measurements were employed to characterize the films. Hall measurements performed on the thin films yielded exceptionally high free carrier mobilities, up to 112 cm2/Vs.
