Title of article :
Different morphology aspects of n-type porous silicon
Author/Authors :
E.Yu. Buchin، نويسنده , , A.B. Churilov، نويسنده , , A.V. Prokaznikov، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
5
From page :
431
To page :
435
Abstract :
Four morphology types of pore structures, that were formed with optimal values of parameters of the system consisted of silicon wafer and electrolyte mixture while changing either temperature or wavelength of initializing irradiation were discovered. The results of optical and electrophysical measurements and physical-chemical analysis are discussed. The assumption concerning possible self-similarity of morphologies of both structures: macro- and micropores is put forward. The analysis of general regularities testifies to existence of the universal fractal mechanism of pores formation process.
Journal title :
Applied Surface Science
Serial Year :
1996
Journal title :
Applied Surface Science
Record number :
990963
Link To Document :
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