Author/Authors :
C. Takakuwa، نويسنده , , M. Tomita، نويسنده , , T. Hatanaka، نويسنده , , I. Suzuki، نويسنده , , G. Franco، نويسنده , , H. Yamaguchi، نويسنده ,
Abstract :
The Cs ion bombardment during secondary ion mass spectrometry induces surface roughness such as precipitates and ripples on ZnSe. These ripples and precipitates cause the degradation of depth resolution. The size and number of precipitates become larger with the decreasing incidence angle of the Cs ion beam. Large Cs incidence angles and sample cooling are found to suppress the above surface roughness and realize high depth resolution profiling of CdZnSeZnSe multilayer films.
