Author/Authors :
Jeong-Sik Lee، نويسنده , , Sohachi Iwai، نويسنده , , Hideo Isshiki، نويسنده , , Takashi Meguro، نويسنده , , Takuo Sugano، نويسنده , , Yoshinobu Aoyagi، نويسنده ,
Abstract :
Layer-by-layer growth on nominally oriented (111)A GaAs substrate has been performed by atomic layer epitaxy (ALE). Under enough AsH3 feeding, the growth rate saturation of one-fourth monolayer per cycle was observed at the Tg range between 560°C and 600°C and three-eighths of monolayer per cycle at the Tg range below 550°C on (111)A substrate. The drastic change of the growth rate saturation at around 550°C indicates some kinds of surface reconstructions or site occupation on (111)A surface during AsH3 supply.
