Title of article
A normal incidence X-ray standing wave study of sulphur adsorption on InP(110)
Author/Authors
T.K. Johal، نويسنده , , M. A. MacDonald and P. Finetti، نويسنده , , V.R. Dhanak، نويسنده , , A.W. Robinson، نويسنده , , A. Patchett، نويسنده , , D.R.T. Zhan، نويسنده , , C. J. R. McGrath، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
5
From page
257
To page
261
Abstract
A normal incidence X-ray standing wave (NIXSW) study of room temperature in-situ S adsorption on InP(110) is described. The S atom XSW profile was measured by detecting S 1s photoemission yield for the (220) Bragg reflection. The average perpendicular distance of the S atoms from the InP(110) surface was determined to be 1.95 ± 0.02 Å. The coherent fraction fc was found to be 0.67 ± 0.02, which upon annealing to 270°C increased to 0.82 ± 0.02. A (1 × 1) low energy diffraction (LEED) pattern was observed in all cases. Models for the adsorption geometry are discussed.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
991066
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