Author/Authors :
T.K. Johal، نويسنده , , M. A. MacDonald and P. Finetti، نويسنده , , V.R. Dhanak، نويسنده , , A.W. Robinson، نويسنده , , A. Patchett، نويسنده , , D.R.T. Zhan، نويسنده , , C. J. R. McGrath، نويسنده ,
Abstract :
A normal incidence X-ray standing wave (NIXSW) study of room temperature in-situ S adsorption on InP(110) is described. The S atom XSW profile was measured by detecting S 1s photoemission yield for the (220) Bragg reflection. The average perpendicular distance of the S atoms from the InP(110) surface was determined to be 1.95 ± 0.02 Å. The coherent fraction fc was found to be 0.67 ± 0.02, which upon annealing to 270°C increased to 0.82 ± 0.02. A (1 × 1) low energy diffraction (LEED) pattern was observed in all cases. Models for the adsorption geometry are discussed.
