Author/Authors :
Takeo Hattori، نويسنده , , Takeshi Aiba، نويسنده , , Etsuo Iijima، نويسنده , , Yohichi Okube، نويسنده , , Hiroshi Nohira، نويسنده , , Naoto Tate، نويسنده , , Masatake Katayama، نويسنده ,
Abstract :
Structural changes produced by the oxidation of hydrogen-terminated Si(111)-1 × 1 and Si(100)-2 × 1 surfaces at 300°C in dry oxygen under a pressure of 1 Torr were investigated by X-ray photoelectron spectroscopy (XPS) and multiple internal reflection infrared absorption spectroscopy (MIR-IRAS). Following results are obtained from the analysis and simulation of the experimental results: (1) the layer-by-layer oxidation reaction occurs locally at SiO2Si(111) interface, while that does not occur at SiO2Si(100) interface, however, (2) the oxidation on Si(100) surface proceeds more uniformly in atomic scale than that on Si(111) surface.
