Author/Authors :
P. De Padova، نويسنده , , R. Larciprete، نويسنده , , C. Ottaviani، نويسنده , , C. Quaresima، نويسنده , , P. Perfetti، نويسنده , , E. Borsella، نويسنده , , C. Astaldi، نويسنده , , C. Comicioli، نويسنده , , C. Crotti، نويسنده , , M. Matteucci، نويسنده , , M. Zacchigna، نويسنده , , Emily K. Prince، نويسنده ,
Abstract :
Synchrotron radiation ultraviolet photoemission spectroscopy (UPS) of O(2s) core levels, valence band (VB) and Sn(4d) spectroscopy was used to monitor the effect of Ar+ sputtering on SnO2 films. The decrease of the O(2s) peak intensity and the increase of the Sn2+ component in the Sn(4d) peak could be satisfactorily correlated with the enhancement of the band gap feature, occurring at 2.9 eV in the VB spectrum, never been due to the formation of Sn(5s–5p) states.
