Title of article
Synchrotron radiation photoelectron spectroscopy of the O(2s) core level as a tool for monitoring the reducing effects of ion bombardment on SnO2 thin films
Author/Authors
P. De Padova، نويسنده , , R. Larciprete، نويسنده , , C. Ottaviani، نويسنده , , C. Quaresima، نويسنده , , P. Perfetti، نويسنده , , E. Borsella، نويسنده , , C. Astaldi، نويسنده , , C. Comicioli، نويسنده , , C. Crotti، نويسنده , , M. Matteucci، نويسنده , , M. Zacchigna، نويسنده , , Emily K. Prince، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
5
From page
349
To page
353
Abstract
Synchrotron radiation ultraviolet photoemission spectroscopy (UPS) of O(2s) core levels, valence band (VB) and Sn(4d) spectroscopy was used to monitor the effect of Ar+ sputtering on SnO2 films. The decrease of the O(2s) peak intensity and the increase of the Sn2+ component in the Sn(4d) peak could be satisfactorily correlated with the enhancement of the band gap feature, occurring at 2.9 eV in the VB spectrum, never been due to the formation of Sn(5s–5p) states.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
991081
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