Author/Authors :
J.-L. Guyaux، نويسنده , , Ph. Lambin، نويسنده , , M.D. Lange، نويسنده , , R. Sporken، نويسنده , , P.A. Thiry، نويسنده , , R. Caudano، نويسنده ,
Abstract :
High-resolution electron-energy-loss spectroscopy has been applied to AlAs ultra-thin films grown by molecular beam epitaxy on GaAs (001). Below 12 AlAs monolayers, the loss intensities deviate from the prediction of the long-wavelength dielectric properties of AlAs and GaAs. Microscopic lattice-dynamics calculations of the surface dielectric response of AlAsGaAs slabs have been performed. A better qualitative agreement with the experimental results is obtained when some cation intermixing is assumed to take place at the interface between the two media.
