Title of article
Band structure evolution in InAs overlayers on GaAs(110)
Author/Authors
Z.Q. He، نويسنده , , L. Ilver and T.G. Andersson، نويسنده , , J. Kanski and P. -O. Nilsson، نويسنده , , P.O. Nilsson، نويسنده , , P. Songsiriritthigul، نويسنده , , G. Holmén، نويسنده , , U.O. Karlsson، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
7
From page
608
To page
614
Abstract
An angle-resolved photoemission study of MBE grown InAsGaAs(110) hetero-structures was carried out to investigate the establishment of valence bands as a function of overlayer thickness. The valence band spectra were found to change gradually up to thicknesses well above 10 nm. The data are interpreted in terms of excitations within the overlayer from a combination of substrate and overlayer initial states, the former tailing into the overlayer.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
991122
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