Author/Authors :
Z.Q. He، نويسنده , , L. Ilver and T.G. Andersson، نويسنده , , J. Kanski and P. -O. Nilsson، نويسنده , , P.O. Nilsson، نويسنده , , P. Songsiriritthigul، نويسنده , , G. Holmén، نويسنده , , U.O. Karlsson، نويسنده ,
Abstract :
An angle-resolved photoemission study of MBE grown InAsGaAs(110) hetero-structures was carried out to investigate the establishment of valence bands as a function of overlayer thickness. The valence band spectra were found to change gradually up to thicknesses well above 10 nm. The data are interpreted in terms of excitations within the overlayer from a combination of substrate and overlayer initial states, the former tailing into the overlayer.
