Author/Authors :
E. DʹAnna، نويسنده , , A. Luches، نويسنده , , A. Perrone، نويسنده , , S. Acquaviva، نويسنده , , R. Alexandrescu، نويسنده , , Shyh-Lin Tsao and I.N. Mihailescu، نويسنده , , J. Zemek، نويسنده , , G. Majni، نويسنده ,
Abstract :
A study of the characteristics of films deposited at room temperature on Si and KBr substrates by XeCl laser ablation of graphite in low pressure (0.25–2.5 mbar) N2 and NH3 is presented. Hard films, with a very high electrical resistivity were obtained. NC atomic ratios up to 0.6 were calculated from backscattering measurements. Different diagnostic techniques (XPS, IR absorption spectroscopy, etc.) prove the formation of carbon nitride with a prevalent graphitic structure.
