Crystallization of silicon carbide thin films by pulsed laser irradiation

Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers. The amorphous films, with a carbon content in the range 30–50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser. The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatment.