Local structure in the oxygen ion implanted PbS photoconductor thin films by EXAFS spectroscopy

X-ray absorption fine structure measurements were performed at the Pb LIII edge on the oxygen implanted PbS semiconductor thin films in order to probe structural changes in such films. It has been found that the PbS bond length was changed from 2.98 Å to 2.82 Å. The nearest neighbor shell of Pb consists of 5.4 S atoms and 0.6 O atoms. The increased values of the Debye-Waller factors indicate the presence of a structural disorder induced by the doping process. We found that a substitution of the sulphur atoms by oxygen at the sulphur sites occurs by oxygen ions implantation of the PbS semiconductor thin films.