Title of article
Ideal monolayer adsorption of germanium on Si(100) surface
Author/Authors
Satoshi Sugahara، نويسنده , , Takuya Kitamura، نويسنده , , Sigeru Imai، نويسنده , , Yasutaka Uchida، نويسنده , , Masakiyo Matsumura، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
8
From page
137
To page
144
Abstract
Self-limiting monolayer adsorption of Ge has been demonstrated on Si(100) at 520°C using dimethylgermane as a self-limiting molecular precursor. This opens a way for hetero-ALE of Ge on the Si surface.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
991241
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