Author/Authors :
Takayuki Shima، نويسنده , , Eiichi Yamamoto، نويسنده , , Shigekazu Kuniyoshi، نويسنده , , Kazuhiro Kudo، نويسنده , , Kuniaki Tanaka، نويسنده , , Shinji Kimura، نويسنده , , Akira Obara، نويسنده , , Yunosuke Makita، نويسنده ,
Abstract :
Photoconductivity (PC) measurements were employed to investigate the photoelectric properties of InAs/GaAs strained-layer structure grown on GaAs (100), (311)A and (111)A substrates. PC results of the sample grown on GaAs (311)A and (111)A substrates showed specific PC signals at lower energy region (around 1.2 eV) from GaAs band-edge. From transient PC measurement varying the sample temperature, activation energies of around 0.19 eV were obtained for the sample grown on (311)A substrate with 1 monolayer of InAs. These activation energies suggest the existence of relatively thick InAs region that are locally formed and/or specific defects formed in thesamples grown on highly oriented substrates.
