Title of article
Ultrafast processes in semiconductor doped glasses
Author/Authors
Carlos H Brito Cruz، نويسنده , , Carlos Lenz Cesar، نويسنده , , Luis Carlos Barbosa، نويسنده , , Ana M de Paula، نويسنده , , Sérgio Tsuda، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
6
From page
30
To page
35
Abstract
We review studies of resonant and nonresonant ultrafast optical processes in semiconductor doped glasses, made at the University of Campinas. First we discuss measurements done in CdTe quantum-dots in glass, excited resonantly. In this case we observe a fast recombination, that depends on the size of the quantum-dot. For the smallest dots, with 3.2 nm average radius, the recovery time constant was found to be 360 fs. Then we describe the observation of the Optical Stark shift in CdSxSe1−x semiconductor-doped glass (SDG) excited under nonresonant below gap condition and probed with femtosecond optical pulses. An ultrafast and pure light-induced shift of the band edge is observed. For a pump intensity of 3 GW/cm2 the band shifts by 11 meV. The response of the shift tracks the profile of the pumping pulse.
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991326
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