Title of article :
248 nm photosensitivity of reduced SiO2–GeO2 layer on silica substrate: preliminary results on the light–matter interaction
Author/Authors :
B Poumellec، نويسنده , , F Kherbouche، نويسنده , , C Haut، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Pages :
6
From page :
283
To page :
288
Abstract :
248 nm photosensitivity is studied in thin layers of H2 reduced SiO2–GeO2 binary glasses deposited onto silica substrates by a flame hydrolysis method. It has been found that several effects take place depending on the time of UV exposure and on the fluence per pulse used. We have called them, `behaviour I, II and IIIʹ. The first one corresponds to an increase of volume under irradiation, induced probably by a reoxidation of Ge previously reduced by the pre-irradiation chemical treatment. The second one is a common fusion–ablation process. The third one is still not clear but would imply, a diffusive process from nonirradiated to irradiated regions. These observations contrast with the ones made in nonreduced SiO2–GeO2 glass for which densification has been pointed out.
Journal title :
Applied Surface Science
Serial Year :
1997
Journal title :
Applied Surface Science
Record number :
991371
Link To Document :
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