Author/Authors :
H Kumagai، نويسنده , , K Adachi، نويسنده , , M Ezaki، نويسنده , , K Toyoda، نويسنده , , M Obara، نويسنده ,
Abstract :
Epitaxial growth of Nd:Y3Al5O12 (Nd:YAG) films on SGGG (Zr- and Sc-doped Gd3Ga5O12) and YAG substrates by pulsed laser deposition using a KrF excimer laser at substrate temperatures of 800°C to 910°C was investigated. The composition of the films was investigated by Rutherford backscattering spectroscopy and the crystallinity by X-ray diffraction analysis. The optical properties of Nd:YAG thin films were investigated by photoluminescence (PL) measurements. The PL spectrum of the Nd:YAG film on the YAG substrate exhibited 4F3/2→4I9/2 and 4F3/2→4I11/2 transitions of Nd3+ ions in YAG which were almost the same as those of the Nd:YAG bulk crystal.
