Quantum wire structures incorporating (GaAs)m(GaP)n short-period superlattice fabricated by atomic layer epitaxy

Lateral confined systems of (GaAs)m(GaP)n short-period superlattice (SPSL) fabricated by using atomic layer epitaxy (ALE), for composition control in quantum nano-structures, are demonstrated. (GaAs)m(GaP)n SPSL were grown on V-grooved GaAs substrates by the localized-ALE on nanometer scale. The lateral confined systems composed of well-defined (GaAs)m(GaP)n SPSL have been confirmed via transmission electron microscopy (TEM) and photoluminescence (PL) measurements. Also GaAs/(GaAs)m(GaP)n-SPSL quantum wire structures were fabricated by ALE growth, and composition control in the structures was successfully realized for the first time.