Selective area growth at multi-atomic-height steps arranged on GaAs (111)A vicinal surfaces by atomic layer epitaxy

A quantum wire array has been fabricated on GaAs (111)A vicinal substrates by continuous growth of metalorganic vapor phase epitaxy (MOVPE) and atomic layer epitaxy (ALE). The formation of multi-atomic height steps with high uniformity and continuity has been achieved by MOVPE on GaAs (111)A vicinal substrates misoriented toward [2̄11] direction. In the ALE process, the growth rate of the GaAs layer on the (111)A terrace has been controlled with the source gas feeding sequence and the growth temperature. Growth suppression on the (111)A terrace and selective adsorption of source molecules at the step region has been confirmed. A GaAs/GaAs0.9P0.1 quantum wire structure has been fabricated on the (111)A vicinal surface using an ALE selective growth technique.