Synthesis and investigation of heterooxides by ML-ALE method

The investigation of MIS structures on silicon substrate grown by a molecular layering (ML)–atomic layer epitaxy (ALE) method has been described. Insulators consisting of an aluminum oxide matrix with 4 monolayers of heterooxides in their bulk were grown as a model of the charge trapping centers. Electrical characteristics of these samples were measured by a C–V technique. The value and the sign of the charge trapping centers were determined by growth conditions and post annealing. Kinetics of charge trapping in the heterooxides showed a strong dependence on the location of heterooxides in an aluminum oxide matrix. The largest value of a charge was obtained in the samples with heterooxides introduced to the matrix close to the silicon–insulator interface. As the intrinsic capture centers in aluminum oxide showed no traps at 77 K, heterooxides actually captured the charge.