Author/Authors :
F. Matsukura، نويسنده , , A. Oiwa، نويسنده , , Gilbert G. Walter and Xiaoping A. Shen، نويسنده , , Y. Sugawara، نويسنده , , N. Akiba، نويسنده , , T. Kuroiwa، نويسنده , , H. Ohno، نويسنده , , A. Endo، نويسنده , , S. Katsumoto، نويسنده , , Y. Iye، نويسنده ,
Abstract :
A new III–V diluted magnetic semiconductor, (Ga, Mn)As, was prepared by low-temperature molecular beam epitaxy. The lattice constant of (Ga, Mn)As films determined by X-ray diffraction showed a linear increase with increase of Mn composition, suggesting homogeneous incorporation of Mn in the film. Magnetization measurements revealed ferromagnetic order at low temperature, while magnetotransport measurements showed the anomalous Hall effect and negative magnetore-sistance associated with the ferromagnetic order in the (Ga, Mn)As films.
