Author/Authors :
T. Jikimoto، نويسنده , , M. Kisaka، نويسنده , , T. Shibasaki، نويسنده , , K. Yoshimoto، نويسنده , , M. Hirai، نويسنده , , M. Kusaka، نويسنده , , M. Iwami and M. Yanagihara، نويسنده ,
Abstract :
The process of VSi(100)2 × 1 interface formation has been examined using low energy electron diffraction (LEED) and photoemission spectroscopy (PES) with synchrotron radiation (SR). The results allow us to conclude that the deposited V atoms interact chemically with Si atoms from the beginning of V deposition on the Si substrate.
