Abstract :
Reflection high-energy electron diffraction RHEED.and X-ray photoelectron spectroscopy XPS.were used to
demonstrate the effects of Znq-ion implantation and subsequent low-power pulsed laser annealing LPPLA.on the
crystallinity and the PrIn ratio near the surface of InP. The influence of ion-beam effects during depth profiling by a 1 to 5
keV Ar beam on the composition of surface layers is discussed in terms of XPS data compared to computer simulation
results using a dynamic model based on TRIM. Relative enrichment in P of the topmost surface layer of virgin samples
along with the P deficiency below the surface is confirmed by both XPS and computer simulation data, the effect being more
pronounced for higher energies of the depth-profiling Arq beam. Severe C and O contamination is found on the
ion-implanted InP surface exposed to air. The PrIn ratios at and below the surface to about 10 nm depth.differ from that
for the virgin sample. Both RHEED and XPS demonstrate the efficiency of laser pulses at a power density of 6 MWrcm2 in
recovering the structure and stoichiometry of ion-implanted crystals of InP.
