Author/Authors :
Shulin Gu )، نويسنده , , Xunming Zhu، نويسنده , , Ning Jiang، نويسنده , , Yi Shi، نويسنده , , Rong Zhang، نويسنده , , Youdou Zheng، نويسنده ,
Abstract :
The deposition of GeSi alloys on Ge substrate by Rapid Thermal Process, Very Low Pressure CVD method has been
studied. The growth rate of the GeSi alloy increases as the Si atoms are incorporated into the GeSi alloy at a proper
temperature. The high substrate temperature will cause the Si fraction and the GeSi growth rate to increase.
