Author/Authors :
Fapei Zhang، نويسنده , ,
Pengshou Xu، نويسنده , , Shihong Xu، نويسنده , , Erdong Lu، نويسنده , ,
Xiaojiang Yu، نويسنده , ,
Xinyi Zhang، نويسنده ,
Abstract :
The growth and electronic structure of the Cr/InP(100) interface are studied by synchrotron radiation photoemission. At the first stage of growth, Cr atoms cover the whole InP surface. With increasing Cr coverage, Cr reacts strongly with the substrate and creates a disruptive interface. The electronic structure of the ultrathin Cr film is found to be different from that of bulk Cr film, and the possibility that magnetic ordering exists in the ultrathin overlayer of Cr is proposed.
