Author/Authors :
S Kasiviswanathan، نويسنده , ,
V Srinivas، نويسنده , ,
A.K Kar، نويسنده , , B.K. Mathur، نويسنده , , K.L. Chopra، نويسنده ,
Abstract :
Scanning tunneling spectroscopy investigations have been carried out on electron beam deposited indium tin oxide films in air. The spectroscopic data exhibit chatacteristics typical of metal-insulator-semiconductor structure, with a heavily doped semiconductor. The measurements have yielded a band gap of about 3.5 eV, which is very close to the bulk value.
