Title of article
Lateral size of atomically flat oxidized region on Sic11 1) surface
Author/Authors
Akio Omura * ، نويسنده , , Hiroaki Sekikawa، نويسنده , , Takeo Hattori، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
127
To page
130
Abstract
A lateral size of an atomically flat oxidized region on a Si( 111) surface was found to be in the rage from 3 to 6 nm at an
average oxide film thickness of 0.7 nm, which corresponds to two molecular layers of silicon dioxide, from the measurement
of effect of terrace width on the layer-by-layer oxidation.
Keywords
SiO , /Si , Interface structure , oxidation reaction , Layer-by-layer oxidation , Terrace width
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991771
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