Title of article :
Quantum chemical study of reaction path for NH !a& with SiH,
Author/Authors :
Akitomo Tachibana، نويسنده , , Tasuku Yano، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Pages :
8
From page :
158
To page :
165
Abstract :
One of the methods of producing silicon nitride layer over the Si surface is the chemical vapor deposition (CVD). Little is known about the mechanism of this nitridation reaction not only on the surface but also in the gas phase. In this paper, we focus our attention on the gas phase reaction between singlet NH (aid) and SiH,. Applying the quantum chemical method, we have found, in addition to a complex formation that is thermodynamically most probable, the other reaction pathways, which agree quite well with the experimental observation that the product ratio for NH, is unexpectedly low.
Keywords :
Silicon nitride , reaction , CVD , Single NH , quantum chemistry
Journal title :
Applied Surface Science
Serial Year :
1997
Journal title :
Applied Surface Science
Record number :
991777
Link To Document :
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